AO4407 30v p-channel mosfet general description product summary v ds i d (at v gs =-20v) -12a r ds(on) (at v gs =-20v) < 13m w r ds(on) (at v gs =-10v) < 14m w r ds(on) (at v gs =-5v) < 30m w 100% uis tested 100% r g tested symbol v ds the AO4407 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v drain-source voltage -30 soic-8 top view bottom view d d d d s s s g g ds v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 t a =25c t a =70c power dissipation b p d avalanche energy l=0.3mh c pulsed drain current c continuous drain current t a =25c mj avalanche current c 101 a 26 a i d -12 -10 -60 v v 25 gate-source voltage drain-source voltage -30 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics w 3.1 soic-8 top view bottom view d d d d s s s g g ds rev 13: july 2010 www.aosmd.com page 1 of 5
AO4407 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.7 -2.25 -2.8 v i d(on) -60 a 8.5 13 m w 10 14 t j =125c 12 19 19 30 m w g fs 27 s v sd -0.72 -1 v i s -4 a c iss 2060 2600 pf c oss 370 pf c rss 295 pf r g 1.2 2.4 3.6 w q g 24 30 36 nc q gs 4.6 nc q gd 10 nc t d(on) 11 ns t 9.4 ns drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-12a reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters m w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current i s =-1a,v gs =0v v ds =-5v, i d =-10.5a v gs =-5v, i d =-7a turn-on rise time forward transconductance diode forward voltage v gs =-20v, i d =-12a v = - 10v, v = - 15v, gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-12a gate source charge gate drain charge r ds(on) static drain-source on-resistance maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters t r 9.4 ns t d(off) 24 ns t f 12 ns t rr 30 40 ns q rr 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-12a, di/dt=100a/ m s turn-on rise time v gs = - 10v, v ds = - 15v, r l =1.25 w , r gen =3 w turn-off fall time body diode reverse recovery charge i f =-12a, di/dt=100a/ m s turn-off delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 13: july 2010 www.aosmd.com page 2 of 5
AO4407 typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 1 2 3 4 5 6 -i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-10v i d =-12a v gs =-5v i d =-7a 25 c 125 c v ds = - 5v v gs =-5v 0 20 40 60 80 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -4v -6v -10v -4.5v -5v v gs =-10v 40 0 20 40 60 80 1 2 3 4 5 6 -i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 5 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-10v i d =-12a v gs =-5v i d =-7a 5 10 15 20 25 30 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds = - 5v v gs =-5v i d =-12a 25 c 125 c 0 20 40 60 80 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -4v -6v -10v -4.5v -5v v gs =-10v rev 13: july 2010 www.aosmd.com page 3 of 5
AO4407 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-12a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 5 10 15 20 25 30 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-12a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w single pulse rev 13: july 2010 www.aosmd.com page 4 of 5
AO4407 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 13: july 2010 www.aosmd.com page 5 of 5
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